







DIODE ZENER 4.7V 500MW SOD123
MOSFET N-CH 200V 100A T-MAX
XTAL OSC VCXO 14.31818MHZ HCMOS
XTAL OSC VCXO 19.4400MHZ HCMOS
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS V® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 22mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 435 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 10200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 520W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | T-MAX™ [B2] |
| 包/箱: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BSL802SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
|
IXFH9N80Wickmann / Littelfuse |
MOSFET N-CH 800V 9A TO247AD |
|
|
APT5012JNMicrosemi |
MOSFET N-CH 500V 43A ISOTOP |
|
|
SI3495DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 5.3A 6TSOP |
|
|
IRL3714LIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO262 |
|
|
FQP630TSTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A TO220-3 |
|
|
IRFR024Vishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
|
IPI80N06S4L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO262-3 |
|
|
SSM5H12TU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 1.9A UFV |
|
|
RJK4514DPK-00#T0Renesas Electronics America |
MOSFET N-CH 450V 22A TO3P |
|
|
NVB5426NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
|
|
FQB70N10TM_AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A D2PAK |
|
|
SI7452DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 11.5A PPAK SO-8 |