







MEMS OSC XO 100.0000MHZ LVCMOS
ETHERNET TO SER RS-232/422/485
MOSFET N-CH 30V 100A TO220-3
XTAL OSC VCXO 48.0000MHZ HCMOS
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 3mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 220 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8180 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
2SK3821-DL-ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 40A SMP-FD |
|
|
FQB7N80TM_AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 6.6A D2PAK |
|
|
BSP135L6433HTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
|
FDV302P_D87ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 25V 120MA SOT23 |
|
|
IRF7809ATRIR (Infineon Technologies) |
MOSFET N-CH 30V 14.5A 8SO |
|
|
IXFV26N50PWickmann / Littelfuse |
MOSFET N-CH 500V 26A PLUS220 |
|
|
AOD425_001Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 9A/50A TO252 |
|
|
FQA55N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 61A TO3P |
|
|
AO3409L_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3 |
|
|
TSM2N7000KCT A3GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 300MA TO92 |
|
|
TPC8031-H(TE12LQM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 11A 8SOP |
|
|
SPI15N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A TO262-3 |
|
|
SI4682DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A 8SO |