English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ II |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 190mOhm @ 9.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2500 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 160W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STF11NM65NSTMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
IXFC16N50PWickmann / Littelfuse |
MOSFET N-CH 500V 10A ISOPLUS220 |
|
NDB7060Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
VN0300LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
IRF7353D2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 6.5A 8SO |
|
NVB6410ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 76A D2PAK |
|
IRL3803VSPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 140A D2PAK |
|
STP30NM30NSTMicroelectronics |
MOSFET N-CH 300V 30A TO220AB |
|
IPI040N06N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO262-3 |
|
SPB35N10IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO263-3 |
|
IRL3303STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 38A D2PAK |
|
IRF730AVishay / Siliconix |
MOSFET N-CH 400V 5.5A TO220AB |
|
RJK6002DPD-00#J2Renesas Electronics America |
MOSFET N-CH 600V 2A MP3A |
