







CRYSTAL 24.5760MHZ 18PF SMD
MOSFET N-CH 60V 8A 5DFN
TERM BLK 12P SIDE ENT 5.08MM PCB
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 24mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 850 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.6W (Ta), 39W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRL2505SIR (Infineon Technologies) |
MOSFET N-CH 55V 104A D2PAK |
|
|
FDD5N50TF_WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4A DPAK |
|
|
RSS105N03FU6TBROHM Semiconductor |
MOSFET N-CH 30V 10.5A 8SOP |
|
|
STL17N3LLH6STMicroelectronics |
MOSFET N-CH 30V 17A POWERFLAT |
|
|
IRFL014TRVishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
|
|
AO4485LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 10A 8SOIC |
|
|
FDD4685-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 8.4A/32A DPAK |
|
|
SIR812DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
|
STB40NS15T4STMicroelectronics |
MOSFET N-CH 150V 40A D2PAK |
|
|
NTD85N02RGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 12A/85A DPAK |
|
|
IPD80R1K4CEBTMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 3.9A TO252-3 |
|
|
IPI100N06S3-04IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO262-3 |
|
|
APT28F60SMicrosemi |
MOSFET N-CH 600V 30A D3PAK |