English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 190mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 10Ohm @ 150mA, 5V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 40 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 830mW (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-236AB |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK1580-T1-ARochester Electronics |
MOSFET N-CH 16V 100MA SC70-3 SSP |
|
IRF9Z34NSTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 19A D2PAK |
|
DMN6069SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 5.6A POWERDI333 |
|
IXTA42N25PWickmann / Littelfuse |
MOSFET N-CH 250V 42A TO263 |
|
SQJA06EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 57A PPAK SO-8 |
|
FQAF27N25Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MCH3427-TL-ERochester Electronics |
MOSFET N-CH 20V 4A 3MCPH |
|
RF1K4909396Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVMFS5C646NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
STW4N150STMicroelectronics |
MOSFET N-CH 1500V 4A TO247-3 |
|
IPP60R210CFD7XKSA1IR (Infineon Technologies) |
MOSFET N CH |
|
FQAF10N80Rochester Electronics |
MOSFET N-CH 800V 6.7A TO3PF |
|
IXFA10N80PWickmann / Littelfuse |
MOSFET N-CH 800V 10A TO263 |
