







 
                            XTAL OSC VCXO 148.42575MHZ
 
                            MOSFET N CH 60V 100A PWRFLAT 5X6
 
                            IC ADC 14BIT SAR 16DIP
 
                            SKT DP 1/2DR 6PT 1
| 类型 | 描述 | 
|---|---|
| 系列: | DeepGATE™, STripFET™ VI | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Obsolete | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 60 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 4.5mOhm @ 11A, 10V | 
| vgs(th) (最大值) @ id: | 2.5V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 8900 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 4.8W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | PowerFlat™ (5x6) | 
| 包/箱: | 8-PowerVDFN | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | CSD23202W10TTexas Instruments | MOSFET P-CH 12V 2.2A 4DSBGA | 
|   | IPA60R520C6XKSA1Rochester Electronics | PFET, 8.1A I(D), 600V, 0.52OHM, | 
|   | RUM003N02T2LROHM Semiconductor | MOSFET N-CH 20V 300MA VMT3 | 
|   | IRF740LCPBFVishay / Siliconix | MOSFET N-CH 400V 10A TO220AB | 
|   | STP8N120K5STMicroelectronics | MOSFET N-CH 1200V 6A TO220 | 
|   | IPW90R340C3XKSA1IR (Infineon Technologies) | MOSFET N-CH 900V 15A TO247-3 | 
|   | FDP039N08B-F102Rochester Electronics | MOSFET N-CH 80V 120A TO220-3 | 
|   | STP14NK50ZFPSTMicroelectronics | MOSFET N-CH 500V 14A TO220FP | 
|   | DMT8012LFG-13Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 80V PWRDI3333 | 
|   | DMP2075UVT-7Zetex Semiconductors (Diodes Inc.) | MOSFET P-CH 20V 3.8A TSOT26 T&R | 
|   | FDD8444LRochester Electronics | MOSFET N-CH 40V 16A/50A TO252AA | 
|   | AOT482LAlpha and Omega Semiconductor, Inc. | MOSFET N-CH 80V 11A/105A TO220 | 
|   | STN3N40K3STMicroelectronics | MOSFET N-CH 400V 1.8A SOT223 |