English
简体中文
CRYSTAL 38.4000MHZ 10PF SMD
XTAL OSC TCXO 48.0000MHZ
MOSFET N-CH 650V 44A 8HSOF
1A 400V ESD CAPABILITY RECTIFIER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ G7 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 15.9A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 800µA |
| 栅极电荷 (qg) (max) @ vgs: | 68 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2670 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 245W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-HSOF-8-2 |
| 包/箱: | 8-PowerSFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR6215TRRPBFRochester Electronics |
MOSFET P-CH 150V 13A DPAK |
|
SCTWA35N65G2VSTMicroelectronics |
TRANS SJT N-CH 650V 45A TO247 |
|
SIHW73N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 73A TO247AD |
|
IRLI530GPBFVishay / Siliconix |
MOSFET N-CH 100V 9.7A TO220-3 |
|
IXFP18N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 18A TO220AB |
|
2SK4101FSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB45N06S409ATMA1Rochester Electronics |
MOSFET N-CH 60V 45A TO263-3 |
|
SIHD4N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 4.3A DPAK |
|
STP18NM60NDSTMicroelectronics |
MOSFET N-CH 600V 13A TO220 |
|
2N6792Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDZ1827NZRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
AUIRLU3114Z-701TRLRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
PSMN3R2-30YLC,115Rochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |