English
简体中文
MOSFET N-CH 60V 120A TO220AB
OPTOISO 3.75KV TRANSISTOR 4SMD
SWITCH KEYLOCK 2 POS 6A 120V
CONN PLUG ARINC Q11/Q11/85 CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.2mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 137 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9997 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 338W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQPF8N90CRochester Electronics |
MOSFET N-CH 900V 6.3A TO220F |
|
FQU3N40TURochester Electronics |
MOSFET N-CH 400V 2A IPAK |
|
STI24NM60NSTMicroelectronics |
MOSFET N CH 600V 17A I2PAK |
|
RD3P200SNTL1ROHM Semiconductor |
MOSFET N-CH 100V 20A TO252 |
|
EPC2059EPC |
TRANS GAN 170V DIE .009OHM |
|
ZVN4424GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 500MA SOT223 |
|
NTD110N02R-001Rochester Electronics |
MOSFET N-CH 24V 12.5A/110A IPAK |
|
STL7N80K5STMicroelectronics |
MOSFET N-CH 800V 3.6A POWERFLAT |
|
STF4N90K5STMicroelectronics |
MOSFET N-CH 900V 4A TO220FP |
|
NVTFS4C06NWFTWGRochester Electronics |
MOSFET N-CH 30V 21A 8WDFN |
|
SPW17N80C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO247-3 |
|
LND150N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
|
STD15NF10T4STMicroelectronics |
MOSFET N-CH 100V 23A DPAK |