English
简体中文
CAP 470MF 0% +100% 5V T/H
MOSFET N-CH 30V 50A LFPAK33
CONN RCPT FMALE 26POS CRIMP
MT3620 GROVE BREAKOUT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.8mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 1.95V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 10.9 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 690 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 45W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK33 |
| 包/箱: | SOT-1210, 8-LFPAK33 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD4856N-35GRochester Electronics |
MOSFET N-CH 25V 13.3A/89A IPAK |
|
IPP60R750E6XKSA1Rochester Electronics |
MOSFET N-CH 600V 5.7A TO220-3 |
|
NTTFS4H05NTAGRochester Electronics |
MOSFET N-CH 25V 22.4A/94A 8WDFN |
|
AUIRF1405ZSRochester Electronics |
MOSFET N-CH 55V 150A D2PAK |
|
DMN2230UQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2A SOT23 |
|
VP2206N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 60V 640MA TO92-3 |
|
SIHS20N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 20A SUPER247 |
|
PMV65UNEARNexperia |
MOSFET N-CH 20V 2.8A TO236AB |
|
RD3P200SNFRATLROHM Semiconductor |
MOSFET N-CH 100V 20A TO252 |
|
STFW40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A ISOWATT |
|
NTD4865N-1GRochester Electronics |
MOSFET N-CH 25V 8.5A/44A IPAK |
|
AOB14N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 14A TO263 |
|
SQ4410EY-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 15A 8SO |