English
简体中文
MEMS OSC XO 33.3330MHZ H/LV-CMOS
MOSFET P-CH 20V 25A PPAK1212-8
BRIDGE RECT 1PHASE 800V 10A GBJ
M12 CABLE SET MEGABIT L52 WLB -
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 9.5mOhm @ 15.3A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 93.8 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 2760 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 33W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8 |
| 包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP50R190CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 18.5A TO220-3 |
|
IRF9Z10PBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
|
FDS3670Rochester Electronics |
MOSFET N-CH 100V 6.3A 8SOIC |
|
SIRA99DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 47.9A/195A PPAK |
|
DMT12H065LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 115V 4.3A 6UDFN |
|
IPA105N15N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 37A TO220-FP |
|
FQD12P10TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 9.4A TO252 |
|
IPS60R210PFD7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16A TO251-3 |
|
DMG7430LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.5A PWRDI3333 |
|
FQD19N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 15.6A DPAK |
|
FDC6392SRochester Electronics |
2.2A, 20V, P-CHANNEL, MOSFET |
|
STP5NK80ZSTMicroelectronics |
MOSFET N-CH 800V 4.3A TO220AB |
|
IPP024N06N3GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |