English
简体中文
CRYSTAL 12.0000MHZ 18PF SMD
MOSFET N-CH 30V 3.2A SOT223
DIODE GEN PURP 100V 3A SOD64
CAT5221 - DUAL DIGITALLY PROGRAM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 2.2A, 10V |
| vgs(th) (最大值) @ id: | 2.8V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 250 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 8.3W (Tc) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB150N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A D2PAK |
|
APT6030BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 21A TO247 |
|
TK20P04M1,RQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 20A DPAK |
|
SFR2955TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTTFS008P03P8ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 22A/96A 8PQFN |
|
IXFN30N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 30A SOT-227B |
|
NTR0202PLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 400MA SOT23-3 |
|
STP17NF25STMicroelectronics |
MOSFET N-CH 250V 17A TO220AB |
|
FDP040N06Rochester Electronics |
MOSFET N-CH 60V 120A TO220-3 |
|
SIHD6N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A DPAK |
|
SI9407BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 4.7A 8SO |
|
SQJ488EP-T2_BE3Vishay / Siliconix |
MOSFET N-CH 100V 42A PPAK SO-8 |
|
FDB045AN08A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 19A/90A D2PAK |