English
简体中文
MOSFET N-CH 20V 3A SUPERSOT6
IC ENERGY METER 4-CH 28QFN
SENSOR 300PSI M12-1.5 6G .5-4.5V
SENSOR REFLECTIVE 100MM PNP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 70mOhm @ 3A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.9 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 355 pF @ 10 V |
| 场效应管特征: | Schottky Diode (Isolated) |
| 功耗（最大值）: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SuperSOT™-6 |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMTH6004SCTB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO263AB |
|
FDP8874Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16A/114A TO220-3 |
|
STP65NF06STMicroelectronics |
MOSFET N-CH 60V 60A TO220AB |
|
IXFP24N60XWickmann / Littelfuse |
MOSFET N-CH 600V 24A TO220AB |
|
SIR680ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 30.7A/125A PPAK |
|
SQJ158EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 23A PPAK SO-8 |
|
SIHG14N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 14A TO247AC |
|
IPD26N06S2L35ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO252-31 |
|
NTK3142PT5GRochester Electronics |
MOSFET P-CH 20V 215MA SOT723 |
|
SIHF6N40D-E3Vishay / Siliconix |
MOSFET N-CH 400V 6A TO220 |
|
R6511KNJTLROHM Semiconductor |
MOSFET N-CH 650V 11A LPTS |
|
BUK9E2R8-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A I2PAK |
|
STD7N60DM2STMicroelectronics |
MOSFET N-CH 600V 6A DPAK |