







MEMS OSC XO 18.4320MHZ LVCMOS LV
SICFET N-CH 1200V 44A TO247-3
36VIN 10W NO-OPTO ISO FLYBACK CO
HDM 8SMPO070F080O LM
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 20V |
| rds on (max) @ id, vgs: | 110mOhm @ 20A, 20V |
| vgs(th) (最大值) @ id: | 4.3V @ 5mA |
| 栅极电荷 (qg) (max) @ vgs: | 56 nC @ 20 V |
| vgs (最大值): | +25V, -15V |
| 输入电容 (ciss) (max) @ vds: | 1670 pF @ 800 V |
| 场效应管特征: | - |
| 功耗(最大值): | 348W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
TK40A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A TO220SIS |
|
|
TK100A10N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 100A TO220SIS |
|
|
STB24N60M6STMicroelectronics |
MOSFET N-CH 600V D2PAK |
|
|
FQP2NA90Rochester Electronics |
MOSFET N-CH 900V 2.8A TO220-3 |
|
|
CPH6604-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
FQAF11N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 7A TO3PF |
|
|
IRF232Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
AON2405Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 8A 6DFN |
|
|
IRFDC20PBFVishay / Siliconix |
MOSFET N-CH 600V 320MA 4DIP |
|
|
RJK0366DPA-02#J0BRochester Electronics |
MOSFET N-CH 30V 25A 8WPAK |
|
|
RQ5A030APTLROHM Semiconductor |
MOSFET P-CH 12V 3A TSMT3 |
|
|
STD15N60DM6STMicroelectronics |
MOSFET N-CH 600V 12A DPAK |
|
|
STL36N60M6STMicroelectronics |
MOSFET N-CH 600V 25A PWRFLAT HV |