English
简体中文
MOSFET N-CH 600V 3A TO220D-A1
IC FLASH 64MBIT SPI/QUAD 8WSON
FUSE HOLDER 30A FOR 10X38MM OR C
FUSE BLOK CART 250V 600A CHASSIS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.5Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 750 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta), 35W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220D-A1 |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP65R380E6XKSA1Rochester Electronics |
MOSFET N-CH 650V 10.6A TO220-3 |
|
IPD650P06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 22A TO252-3 |
|
MTM761230LBFPanasonic |
MOSFET P-CH 20V 3A WSMINI6 |
|
PSMN1R8-30MLHXNexperia |
MOSFET N-CH 30V 150A LFPAK33 |
|
SISA12ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 25A PPAK1212-8 |
|
FDD8870Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A/160A TO252AA |
|
IXTA10P50PWickmann / Littelfuse |
MOSFET P-CH 500V 10A TO263 |
|
BSC030N03LSGRochester Electronics |
BSC030N03 - 12V-300V N-CHANNEL P |
|
IXFK48N60Q3Wickmann / Littelfuse |
MOSFET N-CH 600V 48A TO264AA |
|
BUK9M4R3-40HXNexperia |
MOSFET N-CH 40V 95A LFPAK33 |
|
PSMN5R8-40YS,115Nexperia |
MOSFET N-CH 40V 90A LFPAK56 |
|
SI6426DQRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SSM3K15AMFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA VESM |