English
简体中文
MOSFET N-CH 600V 7A ITO220S
CONN HEADER VERT 4POS
OC-AT-S-FM-042F070F-001-0020
SCR 100V 110A TO94
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1169 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 44.6W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ITO-220S |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7119DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 200V 3.8A PPAK1212-8 |
|
PSMN4R6-100XS,127Rochester Electronics |
MOSFET N-CH 100V 70.4A TO220F |
|
PMV65XPVLNexperia |
MOSFET P-CH 20V 2.8A TO236AB |
|
IRFR420PBFVishay / Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
|
SQM85N15-19_GE3Vishay / Siliconix |
MOSFET N-CH 150V 85A TO263 |
|
BSS64E6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPL65R310E6AUMA1Rochester Electronics |
MOSFET N-CH 650V 13.1A THIN-PAK |
|
XP151A13A0MR-GTorex Semiconductor Ltd. |
MOSFET N-CH 20V 1A SOT23 |
|
SCH1337-TL-WRochester Electronics |
MOSFET P-CH 30V 2A SOT563/SCH6 |
|
ZXMP6A17GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 3A SOT223 |
|
IPB100N06S2L05ATMA1Rochester Electronics |
MOSFET N-CH 55V 100A TO263-3-2 |
|
SI1012CR-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V SC75A |
|
IXFR20N80PWickmann / Littelfuse |
MOSFET N-CH 800V 11A ISOPLUS247 |