







 
                            MEMS OSC XO 60.0000MHZ H/LV-CMOS
 
                            MOSFET P-CH 60V 120MA SOT-23
 
                            NCP1239J 65KHZ
 
                            PMI .250" LED 28V TAB DIFF AMBER
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | P-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 60 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 120mA (Ta) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 10Ohm @ 500mA, 10V | 
| vgs(th) (最大值) @ id: | 3.5V @ 1mA | 
| 栅极电荷 (qg) (max) @ vgs: | 2.5 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 79 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 360mW (Ta) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | SOT-23 | 
| 包/箱: | TO-236-3, SC-59, SOT-23-3 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IRFU110Rochester Electronics | 4.7A 100V 0.540 OHM N-CHANNEL | 
|   | RHU003N03T106ROHM Semiconductor | MOSFET N-CH 30V 300MA UMT3 | 
|   | SQ4182EY-T1_BE3Vishay / Siliconix | MOSFET N-CHANNEL 30V 32A 8SOIC | 
|   | IRFZ48PBFVishay / Siliconix | MOSFET N-CH 60V 50A TO220AB | 
|   | IPW65R080CFDAFKSA1IR (Infineon Technologies) | MOSFET N-CH 650V 43.3A TO247-3 | 
|   | CSD25402Q3ATTexas Instruments | MOSFET P-CH 20V 15A/76A 8VSON | 
|   | BSO080P03NS3GXUMA1IR (Infineon Technologies) | MOSFET P-CH 30V 12A 8DSO | 
|   | 2SK1154-ERochester Electronics | N-CHANNEL POWER MOSFET | 
|   | FDS7066ASN3Rochester Electronics | MOSFET N-CH 30V 19A 8SO | 
|   | IPB80N06S2L09ATMA2IR (Infineon Technologies) | MOSFET N-CH 55V 80A TO263-3 | 
|   | IRFP250MPBFIR (Infineon Technologies) | MOSFET N-CH 200V 30A TO247AC | 
|   | NDS0610-GSanyo Semiconductor/ON Semiconductor | FET -60V 10.0 MOHM SOT23 | 
|   | RUR040N02HZGTLROHM Semiconductor | MOSFET N-CH 20V 4A TSMT3 |