English
简体中文
XTAL OSC VCXO 280.5500MHZ LVDS
MEMS OSC XO 166.6600MHZ LVCMOS
MEMS OSC XO 33.33333MHZ H/LVCMOS
MOSFET N-CH 240V 200MA SOT23-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 240 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 10V |
| rds on (max) @ id, vgs: | 4Ohm @ 300mA, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 360mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR18N15DPBFRochester Electronics |
MOSFET N-CH 150V 18A DPAK |
|
IPA80R310CEXKSA2IR (Infineon Technologies) |
MOSFET N-CH 800V 16.7A TO220-FP |
|
STF10LN80K5STMicroelectronics |
MOSFET N-CH 800V 8A TO220FP |
|
NTD5C648NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A/91A DPAK |
|
FDP075N15A-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 130A TO220-3 |
|
RM17N800HDRectron USA |
MOSFET N-CH 800V 17A TO263-2 |
|
FQI50N06TURochester Electronics |
MOSFET N-CH 60V 50A I2PAK |
|
IRFD9020PBFVishay / Siliconix |
MOSFET P-CH 60V 1.6A 4DIP |
|
BUK6213-30C,118-NEXRochester Electronics |
PFET, 47A I(D), 30V, 0.029OHM, 1 |
|
AOD4504Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 200V 1.5A/6A TO252 |
|
TSM130NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 10A/51A 8PDFN |
|
STF36N60M6STMicroelectronics |
MOSFET N-CH 600V 30A TO220FP |
|
APT18M100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 18A TO247 |