English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 450 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 630mOhm @ 5.7A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSC019N04NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 30A/100A TDSON |
|
DMN3071LFR4-7RZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.4A 3DFN |
|
MTB29N15ET4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AONR21307Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 24A 8DFN |
|
IPS105N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 35A TO251-3 |
|
XPH3R206NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 70A 8SOP |
|
HUFA76645S3STRochester Electronics |
MOSFET N-CH 100V 75A D2PAK |
|
IRLML6346TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 3.4A SOT23 |
|
IRF3703PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 210A TO220AB |
|
IPP50R250CPXKSA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
|
BSP170PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
NTLJS4159NT1GRochester Electronics |
MOSFET N-CH 30V 3.6A 6WDFN |
|
AOT2142LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 40V 120A TO220 |
