English
简体中文
MOSFET N-CH 100V 64A TO263AA
BRIDGE RECT 1P 100V 1.5A DBLS
SENSOR THROUGH-BEAM 4M PNP
OC-PA-S-FA-103F155O-030-0761
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Linear L2™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 64A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 32mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3620 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 357W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263AA |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN3730UFB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 750MA 3DFN |
|
2SK1157-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMG85XP125Rochester Electronics |
P-CHANNEL MOSFET |
|
NTTFS4823NTWGRochester Electronics |
MOSFET N-CH 30V 7.1A/50A 8WDFN |
|
IPP032N06N3GXKSA1Rochester Electronics |
IPP032N06 - 12V-300V N-CHANNEL P |
|
IXKR25N80CWickmann / Littelfuse |
MOSFET N-CH 800V 25A ISOPLUS247 |
|
SQM40010EL_GE3Vishay / Siliconix |
MOSFET N-CH 40V 120A D2PAK |
|
IPB65R190CFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A D2PAK |
|
BUK9614-60E,118Nexperia |
MOSFET N-CH 60V 56A D2PAK |
|
DMP4025LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 6.7A TO252 |
|
ZXMP3A16GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 5.4A SOT223 |
|
PSMN011-80YS,115Nexperia |
MOSFET N-CH 80V 67A LFPAK56 |
|
IPP65R125C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO220-3 |