







 
                            MOSFET N-CH 700V 4A TO251-3
 
                            IC DRAM 2GBIT PARALLEL 78VFBGA
 
                            BMS TGC/RMCDE-L 24V SEP.FEED. (+
 
                            2MM TERMINAL STRIP
| 类型 | 描述 | 
|---|---|
| 系列: | CoolMOS™ P7 | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 700 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 1.4Ohm @ 700mA, 10V | 
| vgs(th) (最大值) @ id: | 3.5V @ 40µA | 
| 栅极电荷 (qg) (max) @ vgs: | 4.7 nC @ 10 V | 
| vgs (最大值): | ±16V | 
| 输入电容 (ciss) (max) @ vds: | 158 pF @ 400 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 22.7W (Tc) | 
| 工作温度: | -40°C ~ 150°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | PG-TO251-3 | 
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IRF610STRLPBFVishay / Siliconix | MOSFET N-CH 200V 3.3A D2PAK | 
|   | DMT3009UFVW-13Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 30V 10.6A/30A PWRDI | 
|   | NVTA7002NT1GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 30V 154MA SC75 | 
|   | FDD9411L-F085Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 40V 25A TO252 | 
|   | CSD23382F4TTexas Instruments | MOSFET P-CH 12V 3.5A 3PICOSTAR | 
|   | IXTH30N60PWickmann / Littelfuse | MOSFET N-CH 600V 30A TO247 | 
|   | FQB12N60CTMRochester Electronics | MOSFET N-CH 600V 12A D2PAK | 
|   | AO4407AAlpha and Omega Semiconductor, Inc. | MOSFET P-CH 30V 12A 8SOIC | 
|   | RM135N100HDRectron USA | MOSFET N-CH 100V 135A TO263-2 | 
|   | IPP60R080P7XKSA1IR (Infineon Technologies) | MOSFET N-CH 650V 37A TO220-3 | 
|   | STP34NM60NSTMicroelectronics | MOSFET N-CH 600V 29A TO220-3 | 
|   | UF3C120040K4SUnitedSiC | SICFET N-CH 1200V 65A TO247-4 | 
|   | NTMFS5C404NLTT3GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 40V 5DFN |