English
简体中文
MOSFET N-CH 100V 160A TO220AB
AE6 5C 5#20 SKT RECP
FPC 1.0MM
CONN RCPT FMALE 4P SILVER CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 132 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 430W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NP90N055VUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 90A TO252-3 |
|
RFD14N05L_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MSC025SMA120JRoving Networks / Microchip Technology |
SICFET N-CH 1.2KV 77A SOT227 |
|
SI8439DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 8V 4MICROFOOT |
|
FDB9409L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 90A D2PAK |
|
STP20NF06LSTMicroelectronics |
MOSFET N-CH 60V 20A TO220AB |
|
DMP1045UQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 4A SOT23 T&R 3 |
|
G3R75MT12DGeneSiC Semiconductor |
SIC MOSFET N-CH 41A TO247-3 |
|
BUK662R7-55C,118Rochester Electronics |
PFET, 120A I(D), 55V, 0.0044OHM, |
|
BUK956R1-100E,127Rochester Electronics |
MOSFET N-CH 100V 120A TO220AB |
|
AUIRFS8408TRRRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
FQB6N25TMRochester Electronics |
MOSFET N-CH 250V 5.5A D2PAK |
|
IPP60R520C6Rochester Electronics |
N-CHANNEL POWER MOSFET |