English
简体中文
SICFET N-CH 1200V 103A TO247-3
DIODE ZENER 6.8V 350MW SOT23-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 103A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 28mOhm @ 60A, 20V |
| vgs(th) (最大值) @ id: | 4.3V @ 20mA |
| 栅极电荷 (qg) (max) @ vgs: | 203 nC @ 20 V |
| vgs (最大值): | +25V, -15V |
| 输入电容 (ciss) (max) @ vds: | 2890 pF @ 800 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 535W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFN360N10TWickmann / Littelfuse |
MOSFET N-CH 100V 360A SOT-227B |
|
IRFR4105ZPBFRochester Electronics |
MOSFET N-CH 55V 30A DPAK |
|
IPI80CN10NGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT22F80BRoving Networks / Microchip Technology |
MOSFET N-CH 800V 23A TO247 |
|
APT10078BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 14A TO247 |
|
FDD6778ARochester Electronics |
MOSFET N-CH 25V 12A/10A DPAK |
|
AOWF11S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 11A TO262F |
|
TK15A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 15A TO220SIS |
|
IXFN170N30PWickmann / Littelfuse |
MOSFET N-CH 300V 138A SOT-227B |
|
VP2206N3-G-P003Roving Networks / Microchip Technology |
MOSFET P-CH 60V 640MA TO92-3 |
|
AOT20N25LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 250V 20A TO220 |
|
DMJ70H600SH3Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 700V 11A TO251 |
|
IXTP15N50L2Wickmann / Littelfuse |
MOSFET N-CH 500V 15A TO220AB |