







MOSFET P-CH 40V 6.9A 6TSOP
CABLE 4COND 14AWG BLK SHLD 1=1FT
BRD SPT SNAP LOCK NYLON 9/16"
OSCILLATOR
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.9A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 58mOhm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11.3 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 990 pF @ 20 V |
| 场效应管特征: | - |
| 功耗(最大值): | 5W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRFR9110TRRPBFVishay / Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
|
|
STL33N65M2STMicroelectronics |
MOSFET N-CH 650V 20A PWRFLAT HV |
|
|
5LN01M-TL-HRochester Electronics |
MOSFET N-CH 50V 100MA 3MCP |
|
|
SIHF8N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220 |
|
|
RUU002N05T106ROHM Semiconductor |
MOSFET N-CH 50V 200MA UMT3 |
|
|
SIR150DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 45V 30.9A/110A PPAK |
|
|
STFU10N80K5STMicroelectronics |
MOSFET N-CH 800V 9A TO220FP |
|
|
IXFK24N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 24A TO264AA |
|
|
IPD65R1K4CFDATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 2.8A TO252-3 |
|
|
BUK9Y3R5-40E,115Nexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
|
FDMS7682Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16A/22A 8PQFN |
|
|
IRFIZ34NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 21A TO220AB FP |
|
|
VN10KN3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |