English
简体中文
MOSFET P-CH 20V 6.5A TSMT6
CONN RCPT FMALE 66POS GOLD CRIMP
ACT96MC98PE-3025
BIT D'VERSIBIT .500X.187X36.00"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V |
| rds on (max) @ id, vgs: | 21mOhm @ 6.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1520 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TSMT6 (SC-95) |
| 包/箱: | SC-95-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUF75637S3SRochester Electronics |
MOSFET N-CH 100V 44A D2PAK |
|
ND2012L-TR1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
APT6025BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 24A TO247 |
|
PMF3800SN,115Rochester Electronics |
MOSFET N-CH 60V 260MA SC70 |
|
SI2314EDS-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 3.77A SOT23-3 |
|
IAUC120N06S5N017ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TDSON-8-43 |
|
SFT1458-HRochester Electronics |
MOSFET N-CH 600V 1A IPAK/TP |
|
STP55NF06STMicroelectronics |
MOSFET N-CH 60V 50A TO220AB |
|
SUM90P10-19L-E3Vishay / Siliconix |
MOSFET P-CH 100V 90A TO263 |
|
HUFA75307T3STRochester Electronics |
MOSFET N-CH 55V 2.6A SOT223-4 |
|
NTMFS4C03NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/136A 5DFN |
|
DMT10H010LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 68.8A TO252 |
|
STP30NF10STMicroelectronics |
MOSFET N-CH 100V 35A TO220AB |