English
简体中文
MOSFET N-CH 900V 7A TO3P
RF DIODE PIN 200V 250MW SOT23
SL WTW CONN SR OPT B 9POS
CBL FMALE TO MALE RA 8POS 4.92'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | π-MOSVIII |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2Ohm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 700µA |
| 栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1350 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P(N) |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD042P03L3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 70A TO252-3 |
|
BUK7Y3R0-40HXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
NTMFS4833NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16A/156A 5DFN |
|
RSD046P05TLROHM Semiconductor |
MOSFET P-CH 45V 4.5A CPT3 |
|
IXTH10P50PWickmann / Littelfuse |
MOSFET P-CH 500V 10A TO247 |
|
IRFRC20TRRPBFVishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
|
DMN2050LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 5.9A SOT23 |
|
IPN80R1K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A SOT223 |
|
BSL302SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 30V 7.1A TSOP-6-6 |
|
STD1NK80Z-1STMicroelectronics |
MOSFET N-CH 800V 1A IPAK |
|
BUK7M10-40EXNexperia |
MOSFET N-CH 40V 56A LFPAK33 |
|
2SK4222Rochester Electronics |
MOSFET N-CH 600V 23A TO3PB |
|
ZXMN20B28KTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 1.5A TO252-3 |