English
简体中文
MEMS OSC XO 50.0000MHZ LVCMOS
MOSFET N-CH 25V 100A LFPAK56
DIODE GEN PURP 1KV 30A TO247AC
MODULAR KEYSTONE JACK, ORANGE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 1.2mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.15V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 6.38 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SOT-1023, 4-LFPAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSP135L6327HTSA1Rochester Electronics |
MOSFET N-CH 600V 120MA SOT223-4 |
|
TSM13ND50CITSC (Taiwan Semiconductor) |
MOSFET N-CH 500V 13A ITO220 |
|
NVMFS015N10MCLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10.5A/54A 5DFN |
|
HRFZ44NRochester Electronics |
MOSFET N-CH 55V 49A TO220-3 |
|
IRFI840BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCPF260N65FL1Rochester Electronics |
MOSFET N-CH 650V 15A TO220F |
|
FDD9407L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 100A DPAK |
|
DMN10H099SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 17A TO252 |
|
2SK3306B-S17-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN2R5-60PL127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQP4P40Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 400V 3.5A TO220-3 |
|
FDI047AN08A0Rochester Electronics |
MOSFET N-CH 75V 80A I2PAK |
|
PHP33NQ20T,127Nexperia |
MOSFET N-CH 200V 32.7A TO220AB |