English
简体中文
MEMS OSC XO 33.3300MHZ CMOS SMD
MEMS OSC XO 19.6608MHZ CMOS SMD
MOSFET N-CHANNEL 600V 13A TO220
CONN BARRIER STRIP 8CIRC 0.394"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M2-EP |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFS7530TRLPBFIR (Infineon Technologies) |
MOSFET N CH 60V 195A D2PAK |
|
DMN61D9UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 340MA SOT323 |
|
PSMN2R6-60PS127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL3103STRLPBFRochester Electronics |
IRL3103 - HEXFET POWER MOSFET |
|
NVMFS5C612NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |
|
PMZB790SN,315Rochester Electronics |
MOSFET N-CH 60V 650MA DFN1006B-3 |
|
IRF7855PBFRochester Electronics |
MOSFET N-CH 60V 12A 8SO |
|
FQI3N30TURochester Electronics |
MOSFET N-CH 300V 3.2A I2PAK |
|
BSS169L6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
CPC3708CTRWickmann / Littelfuse |
MOSFET N-CH 350V 5MA SOT89 |
|
IAUT300N08S5N012ATMA2IR (Infineon Technologies) |
MOSFET N-CH 80V 300A 8HSOF |
|
FQI13N06LTURochester Electronics |
MOSFET N-CH 60V 13.6A I2PAK |
|
FQP19N10LRochester Electronics |
MOSFET N-CH 100V 19A TO220-3 |