







 
                            PFET, 100A I(D), 40V, 0.0023OHM,
 
                            SI LIMITER NON HERMETIC MMSM
 
                            CONN HEADER SMD 42POS 2.54MM
 
                            EMI BEAD FILETER, AEC-Q200
| 类型 | 描述 | 
|---|---|
| 系列: | TrenchMOS™ | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 40 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 2.3mOhm @ 25A, 10V | 
| vgs(th) (最大值) @ id: | 4V @ 1mA | 
| 栅极电荷 (qg) (max) @ vgs: | 175 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 11.323 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 333W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | TO-220AB | 
| 包/箱: | TO-220-3 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | NDS9435ARochester Electronics | MOSFET P-CH 30V 5.3A 8SOIC | 
|   | BUK7Y15-100EXRochester Electronics | MOSFET N-CH 100V 68A LFPAK56 | 
|   | FDD3680Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 100V 25A TO252 | 
|   | RSJ800N06TLROHM Semiconductor | MOSFET N-CH 60V 80A LPTS | 
|   | CPH6347-TL-WSanyo Semiconductor/ON Semiconductor | MOSFET P-CH 20V 6A 6CPH | 
|   | 2N7002A-7Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 60V 180MA SOT23 | 
|   | SI4636DY-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 17A 8SO | 
|   | MCH6353-TL-WSanyo Semiconductor/ON Semiconductor | MOSFET P-CH 12V 6A 6MCPH | 
|   | IXFR16N120PWickmann / Littelfuse | MOSFET N-CH 1200V 9A ISOPLUS247 | 
|   | BUK9506-40B,127Rochester Electronics | PFET, 75A I(D), 40V, 0.0071OHM, | 
|   | FQD11P06TMSanyo Semiconductor/ON Semiconductor | MOSFET P-CH 60V 9.4A DPAK | 
|   | FQPF1N60Rochester Electronics | MOSFET N-CH 600V 900MA TO220F | 
|   | SI7116BDN-T1-GE3Vishay / Siliconix | MOSFET N-CH 40V 18.4A/65A PPAK |