| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
STP80NF06STMicroelectronics |
MOSFET N-CH 60V 80A TO220AB |
|
|
PSMN9R0-25MLC,115Nexperia |
MOSFET N-CH 25V 55A LFPAK33 |
|
|
IPD65R420CFDAATMA1Rochester Electronics |
MOSFET N-CH 650V 8.7A TO252-3 |
|
|
IPI320N20N3GAKSA1Rochester Electronics |
MOSFET N-CH 200V 34A TO262-3 |
|
|
APT30F60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 31A ISOTOP |
|
|
PSMN027-100PS,127Nexperia |
MOSFET N-CH 100V 37A TO220AB |
|
|
IPB60R099CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A TO263-3 |
|
|
STW45NM60STMicroelectronics |
MOSFET N-CH 650V 45A TO247-3 |
|
|
TPH6R003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 38A 8SOP |
|
|
IPI100N06S3L04XKIR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO262-3 |
|
|
SI7636DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 17A PPAK SO-8 |
|
|
STP45N40DM2AGSTMicroelectronics |
MOSFET N-CH 400V 38A TO220 |
|
|
IRLML0030TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 5.3A SOT23 |