







TVS DIODE 8V 13.4V DO214AA
MEMS OSC XO 66.0000MHZ H/LV-CMOS
SW TOGGLE SPDT 5A 120V NO HARDWR
600V, 0.6OHM, N-CHANNEL, MOSFET
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.3A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 600mOhm @ 2.4A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 200µA |
| 栅极电荷 (qg) (max) @ vgs: | 20.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 440 pF @ 100 V |
| 场效应管特征: | - |
| 功耗(最大值): | 28W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
2SK2724-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
PMV16XN215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
IRFBC40LCPBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
|
STP20NM50STMicroelectronics |
MOSFET N-CH 500V 20A TO220AB |
|
|
FQD12P10TMRochester Electronics |
MOSFET P-CH 100V 9.4A TO252 |
|
|
2SK3113-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
R5011FNJTLROHM Semiconductor |
MOSFET N-CH 500V 11A LPT |
|
|
2SK2341-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
STP28N60M2STMicroelectronics |
MOSFET N-CH 600V 24A TO220 |
|
|
SI3460DDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 7.9A 6TSOP |
|
|
RJK0346DPA-00#J0Rochester Electronics |
MOSFET N-CH 30V 65A 8WPAK |
|
|
NTMFS4119NT1GRochester Electronics |
MOSFET N-CH 30V 11A 5DFN |
|
|
SIHF35N60E-GE3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 32A TO220 |