English
简体中文
RES ARRAY 4 RES 1.5K OHM 2012
MOSFET P-CH 30V 25A DPAK
CONN BARRIER STRP 11CIRC 0.375"
IC DRAM 128MBIT PARALLEL 90VFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 80mOhm @ 25A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 1.26 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 75W (Tj) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDP80N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A TO220-3 |
|
HUFA75842P3Rochester Electronics |
MOSFET N-CH 150V 43A TO220-3 |
|
IPAW60R380CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 15A TO220 |
|
IPD50N04S309ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STY100NM60NSTMicroelectronics |
MOSFET N CH 600V 98A MAX247 |
|
PSMN1R5-30BLEJNexperia |
MOSFET N-CH 30V 120A D2PAK |
|
NTD4809N-1GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A IPAK |
|
TK80S04K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 80A DPAK |
|
IRF9630Rochester Electronics |
MOSFET P-CH 200V 6.5A TO220AB |
|
MCP07N65-BPMicro Commercial Components (MCC) |
MOSFET N-CH 650V 7A TO220AB |
|
IRFR024NTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |
|
DMNH6021SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 50A TO252-4L |
|
IRL630STRLPBFVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |