English
简体中文
CRYSTAL 48.0000MHZ 8PF SMD
N-CHANNEL POWER MOSFET
DIODE GP 2.5KV 540A DO200AA
BLUE/465NM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMMBFJ310LT3Rochester Electronics |
RF N-CHANNEL, JUNCTION FET |
|
TK8A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 7.8A TO220SIS |
|
FQH140N10Rochester Electronics |
MOSFET N-CH 100V 140A TO247-3 |
|
NTD85N02R-001Rochester Electronics |
MOSFET N-CH 24V 12A/85A IPAK |
|
FQB5N60CTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A D2PAK |
|
SIB456DK-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 6.3A PPAK SC75 |
|
SSM6J424TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A UF6 |
|
SIS472ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 24A PPAK1212-8 |
|
IRF7526D1TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 2A MICRO8 |
|
FDMS8320LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 36A/100A 8PQFN |
|
PXN9R0-30QLJNexperia |
PXN9R0-30QL/SOT8002/MLPAK33 |
|
SI7850DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 6.2A PPAK SO-8 |
|
BUK962R8-60E,118Nexperia |
MOSFET N-CH 60V 120A D2PAK |