







 
                            LED DRIVERS POWER SUPPLIES 350MA
 
                            CRYSTAL 25.0000MHZ 10PF SMD
 
                            MOSFET P-CH 30V 20A 8SO
 
                            NOW WEEN - BTA2008-800E - 3 QUAD
| 类型 | 描述 | 
|---|---|
| 系列: | HEXFET® | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | P-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 30 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 4.6mOhm @ 20A, 10V | 
| vgs(th) (最大值) @ id: | 2.4V @ 100µA | 
| 栅极电荷 (qg) (max) @ vgs: | 165 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 5250 pF @ 15 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 2.5W (Ta) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 8-SO | 
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IPP65R310CFDXKSA1IR (Infineon Technologies) | MOSFET N-CH 650V 11.4A TO220-3 | 
|   | IPP80R280P7XKSA1IR (Infineon Technologies) | MOSFET N-CH 800V 17A TO220-3 | 
|   | NVD5807NT4GRochester Electronics | MOSFET N-CH 40V 23A DPAK | 
|   | BUK9Y53-100B,115Nexperia | MOSFET N-CH 100V 23A LFPAK56 | 
|   | IXFX32N80PWickmann / Littelfuse | MOSFET N-CH 800V 32A PLUS247-3 | 
|   | IRLM110ATFRochester Electronics | MOSFET N-CH 100V 1.5A SOT223-4 | 
|   | NTTFS4C10NTAGSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 30V 8.2A/44A 8WDFN | 
|   | IPT026N10N5ATMA1IR (Infineon Technologies) | MOSFET N-CH 100V 27A/202A 8HSOF | 
|   | IPD65R1K0CEAUMA1IR (Infineon Technologies) | MOSFET N-CH 650V 7.2A TO252-3 | 
|   | STF33N60M2STMicroelectronics | MOSFET N-CH 600V 26A TO220FP | 
|   | PSMN1R5-30YLC,115Nexperia | MOSFET N-CH 30V 100A LFPAK56 | 
|   | IPI100N04S3-03Rochester Electronics | N-CHANNEL POWER MOSFET | 
|   | SIRA26DP-T1-RE3Vishay / Siliconix | MOSFET N-CH 25V 60A PPAK SO-8 |