English
简体中文
CRYSTAL 48.0000MHZ 12PF SMD
MOSFET N-CH 25V 60A PPAK SO-8
IGBT-N-CHAN ENHANCEMENT
CONN MOD JACK 8P8C VERT UNSHLD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 0.76mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 155 nC @ 10 V |
| vgs (最大值): | +16V, -12V |
| 输入电容 (ciss) (max) @ vds: | 7570 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83.3W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQJ414EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
|
SQD50N04-4M5L_GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO252AA |
|
IRFP460APBFVishay / Siliconix |
MOSFET N-CH 500V 20A TO247-3 |
|
IRF1405ZSTRLPBFRochester Electronics |
PFET, 75A I(D), 55V, 0.0049OHM, |
|
AON7407Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 14.5A/40A 8DFN |
|
AOT8N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 8A TO220 |
|
IPP50R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR420Rochester Electronics |
2.5A 500V 3.000 OHM N-CHANNEL |
|
NTB10N60Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPU50R950CEBKMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
DMT3008LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A 6UDFN |
|
LSIC1MO120E0120Wickmann / Littelfuse |
SICFET N-CH 1200V 27A TO247-3 |
|
DI030N03D1Diotec Semiconductor |
MOSFET N-CH 30V 30A TO252-3 DPAK |