English
简体中文
MOSFET N-CH 40V 100A LFPAK56
.050 X .050 C.L. FEMALE IDC ASSE
LABEL PANEL RAISED
TAPE DBL COAT GRY 1/2"X 8" 15/PK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 1.55mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 1.95V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 126 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7790 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 288W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56; Power-SO8 |
| 包/箱: | SOT-1023, 4-LFPAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPH1R405PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 45V 120A 8SOP |
|
IRFR014TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
IRFPE50PBFVishay / Siliconix |
MOSFET N-CH 800V 7.8A TO247-3 |
|
BUK654R0-75C,127Rochester Electronics |
PFET, 120A I(D), 75V, 0.006OHM, |
|
SIR870ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
SQA403EJ-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 10A PPAK SC70-6 |
|
FQB27N25TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 25.5A D2PAK |
|
DMP4025LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 6A 8SO |
|
FDPF045N10ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 67A TO220F |
|
IPW90R120C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 36A TO247-3 |
|
2SK4210Rochester Electronics |
MOSFET N-CH 900V 10A TO3PB |
|
FDD3860Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6.2A DPAK |
|
PSMN2R0-25MLDXNexperia |
MOSFET N-CH 25V 70A LFPAK33 |