类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 3.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 72mOhm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | 2.6V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 5.6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 280 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-563/SCH6 |
包/箱: | SOT-563, SOT-666 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC021N08NS5ATMA1IR (Infineon Technologies) |
MOSFET TRENCH 80V TSON-8 |
|
IRF4905LPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 42A TO262 |
|
IXFA18N60XWickmann / Littelfuse |
MOSFET N-CH 600V 18A TO263AA |
|
AOW4S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO262 |
|
SQM40020EL_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO263 |
|
PMV28UNEA215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF1407PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 130A TO220AB |
|
HUF75344P3Rochester Electronics |
MOSFET N-CH 55V 75A TO220-3 |
|
SQS840CENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 12A PPAK 1212-8W |
|
CPH3431-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
NTD50N03RT4Rochester Electronics |
MOSFET N-CH 25V 7.8A/45A DPAK |
|
FQA8N90CRochester Electronics |
MOSFET N-CH 900V 8A TO3P |
|
PSMN6R1-25MLDXNexperia |
MOSFET N-CH 25V 60A LFPAK33 |