







MEMS OSC XO 30.0000MHZ H/LV-CMOS
MOSFET N-CH 75V 59A TO220AB
TERMINAL MARKER DEK 5 GW BL/SW
AC/DC PS (OPEN FRAME)
| 类型 | 描述 |
|---|---|
| 系列: | StrongIRFET™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 59A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
| rds on (max) @ id, vgs: | 10.6mOhm @ 35A, 10V |
| vgs(th) (最大值) @ id: | 3.7V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 83 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3.049 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 99W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
TP2502N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 20V 630MA TO243AA |
|
|
IPB80N04S2H4-ATMA2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
STI300N4F6STMicroelectronics |
MOSFET N CH 40V 160A I2PAK |
|
|
IRF1324S-7PPBFRochester Electronics |
MOSFET N-CH 24V 240A D2PAK |
|
|
NTMFS5C450NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/102A 5DFN |
|
|
IAUC100N04S6N022ATMA1IR (Infineon Technologies) |
IAUC100N04S6N022ATMA1 |
|
|
PSMN021-100YLXNexperia |
MOSFET N-CH 100V 49A LFPAK56 |
|
|
FDP10AN06A0Rochester Electronics |
MOSFET N-CH 60V 12A/75A TO220-3 |
|
|
MSC025SMA120BRoving Networks / Microchip Technology |
SICFET N-CH 1.2KV 103A TO247-3 |
|
|
DMS3014SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.4A 8SO |
|
|
FDMS86550ET60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A/245A POWER56 |
|
|
BSC050N03LSGXTRochester Electronics |
BSC050N03 - 12V-300V N-CHANNEL P |
|
|
2SK1283-AZRochester Electronics |
N-CHANNEL POWER MOSFET |