English
简体中文
XTAL OSC XO 300.0000MHZ LVDS SMD
MOSFET N-CH 100V 180A TO247
CONN HEADER SMD 30POS 1.27MM
TOOL HAND CRIMPER 16-20AWG SIDE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 180A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 6.4mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 151 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 480W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXTH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFS3306TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A D2PAK |
|
PHB18NQ10T,118Rochester Electronics |
MOSFET N-CH 100V 18A D2PAK |
|
FCI25N60N-F102Rochester Electronics |
MOSFET N-CH 600V 25A I2PAK |
|
IPN70R450P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 10A SOT223 |
|
BUK9C10-55BIT/A,11Rochester Electronics |
MOSFET N-CH 55V 75A D2PAK-7 |
|
FCMT250N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 12A POWER88 |
|
FDS2670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3A 8SOIC |
|
NTTFS5C673NLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 13A/50A 8WDFN |
|
MCH6336-TL-HRochester Electronics |
P-CHANNEL, MOSFET |
|
TPH1R204PB,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8SOP |
|
DMT10H025LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 47.2A TO252 T&R |
|
MCH3376-TL-ERochester Electronics |
P-CHANNEL, MOSFET |
|
NTMSD2P102LR2Rochester Electronics |
MOSFET P-CH 20V 2.3A 8SOIC |