







 
                            MOSFET N-CH 1000V 23A T-MAX
 
                            MEMS OSC XO 2.0480MHZ CMOS SMD
 
                            CIR BRKR THRM 13A 250VAC 50VDC
 
                            POT 1K OHM 1W PLASTIC LINEAR
| 类型 | 描述 | 
|---|---|
| 系列: | POWER MOS 7® | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 1000 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 23A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 450mOhm @ 11.5A, 10V | 
| vgs(th) (最大值) @ id: | 5V @ 2.5mA | 
| 栅极电荷 (qg) (max) @ vgs: | 154 nC @ 10 V | 
| vgs (最大值): | ±30V | 
| 输入电容 (ciss) (max) @ vds: | 4350 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 565W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | T-MAX™ [B2] | 
| 包/箱: | TO-247-3 Variant | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | SIHB33N60ET1-GE3Vishay / Siliconix | MOSFET N-CH 600V 33A TO263 | 
|   | SIHFR1N60A-GE3Vishay / Siliconix | MOSFET N-CH 600V 1.4A TO252AA | 
|   | STL210N4F7AGSTMicroelectronics | MOSFET N-CH 40V 120A POWERFLAT | 
|   | APTM120U10SAGRoving Networks / Microchip Technology | MOSFET N-CH 1200V 116A SP6 | 
|   | AOT2916LAlpha and Omega Semiconductor, Inc. | MOSFET N CH 100V 5A TO220 | 
|   | FDD3580Rochester Electronics | MOSFET N-CH 80V 7.7A DPAK | 
|   | APT30M70BVFRGRoving Networks / Microchip Technology | MOSFET N-CH 300V 48A TO247 | 
|   | IXTP170N075T2Wickmann / Littelfuse | MOSFET N-CH 75V 170A TO220AB | 
|   | NVMTS0D7N06CLTXGSanyo Semiconductor/ON Semiconductor | AFSM T6 60V LL NCH | 
|   | AUIRFZ48ZSRochester Electronics | MOSFET N-CH 55V 61A D2PAK | 
|   | STB85NF55T4STMicroelectronics | MOSFET N-CH 55V 80A D2PAK | 
|   | AO3409Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 30V 2.6A SOT23-3L | 
|   | IPB200N15N3GRochester Electronics | IPB200N15 - 12V-300V N-CHANNEL P |