







MOSFET N-CH 40V 19A/100A 8VSON
NETWORK SWITCH-ADVANCED 6 PORT
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Ta), 100A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.3mOhm @ 22A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2640 pF @ 20 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.1W (Ta), 120W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSONP (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
HUF76609D3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A TO252AA |
|
|
FQI1P50TURochester Electronics |
MOSFET P-CH 500V 1.5A I2PAK |
|
|
AUIRFR3607TRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
|
UF3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
|
IRFR321Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
TPN3R704PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 80A 8TSON |
|
|
IXTK550N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 550A TO264 |
|
|
SI1032X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 200MA SC89-3 |
|
|
FQP9N15Rochester Electronics |
MOSFET N-CH 150V 9A TO220-3 |
|
|
IPAN50R500CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 11.1A TO220 |
|
|
PSMN7R0-100ES,127Rochester Electronics |
MOSFET N-CH 100V 100A I2PAK |
|
|
IPW50R250CPFKSA1Rochester Electronics |
MOSFET N-CH 500V 13A TO247-3 |
|
|
IPP029N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 24A/100A TO220-3 |