English
简体中文
RES 41.2K OHM 1/8W 1% AXIAL
MOSFET N-CH 800V 13A TO220AB
CLIP SLEEVE & WM - LEGEND: C
VCAD:VP-B2384829E
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | E |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 350mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 53 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1093 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 156W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT50M65JLLRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A ISOTOP |
|
NVMYS3D3N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 26A/133A 4LFPAK |
|
IPB160N04S203ATMA1Rochester Electronics |
MOSFET N-CH 40V 160A TO263-7-3 |
|
NTK3134NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 750MA SOT723 |
|
UPA2709GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVF3055L108T3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
IXFT30N50PWickmann / Littelfuse |
MOSFET N-CH 500V 30A TO268 |
|
IPA90R1K2C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 5.1A TO220-FP |
|
NVMFS5C410NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 48A/315A 5DFN |
|
BSC16DN25NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 10.9A TDSON-8-5 |
|
FDS9431A-F085Rochester Electronics |
MOSFET P-CH 20V 3.5A 8SOIC |
|
NTD6415ANLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 23A DPAK |
|
SIR172ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 24A PPAK SO-8 |