







XTAL OSC XO 100.0000MHZ HCSL
MEMS OSC XO 80.0000MHZ LVDS SMD
MOSFET N-CH 900V 33A SOT227B
MOSFET P-CH 20V 5.7A 6TSOP
| 类型 | 描述 |
|---|---|
| 系列: | Polar™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 210mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 6.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 230 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 14000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 695W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227B |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
FCH040N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 65A TO247-3 |
|
|
IPA028N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 89A TO220-FP |
|
|
IRLR120PBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
|
RM1002Rectron USA |
MOSFET N-CHANNEL 100V 2A SOT23 |
|
|
PMV16XNRNexperia |
MOSFET N-CH 20V 6.8A TO236AB |
|
|
IRF8734TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A 8SO |
|
|
SQS462EN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 8A PPAK1212-8 |
|
|
STB45N50DM2AGSTMicroelectronics |
MOSFET N-CH 500V 35A D2PAK |
|
|
STD2N105K5STMicroelectronics |
MOSFET N-CH 1050V 1.5A DPAK |
|
|
IPB65R420CFDATMA1Rochester Electronics |
MOSFET N-CH 650V 8.7A D2PAK |
|
|
DMN4060SVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 45V 4.8A TSOT26 |
|
|
HUFA75309D3SRochester Electronics |
MOSFET N-CH 55V 19A TO252AA |
|
|
BUK961R5-30E,118Rochester Electronics |
MOSFET N-CH 30V 120A D2PAK |