







 
                            18-36VDC IN 56VDC OUT 30W HI POW
 
                            MOSFET N-CH 30V 300MA SOT323-3
 
                            CONN RCPT 38POS 0.05 GOLD SMD
 
                            .050 X .050 C.L. FEMALE IDC ASSE
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 30 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 300mA (Ta) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 2Ohm @ 100mA, 10V | 
| vgs(th) (最大值) @ id: | 2.5V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 360 pC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 22 pF @ 10 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 350mW (Ta) | 
| 工作温度: | 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | SOT-323-3 | 
| 包/箱: | SC-70, SOT-323 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | SPW47N65C3FKSA1Rochester Electronics | POWER FIELD-EFFECT TRANSISTOR, 4 | 
|   | IRF520SPBFVishay / Siliconix | MOSFET N-CH 100V 9.2A D2PAK | 
|   | FDP085N10A-F102Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 100V 96A TO220-3 | 
|   | IRFR7746TRPBFIR (Infineon Technologies) | MOSFET N-CH 75V 56A DPAK | 
|   | SIRA84BDP-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 22A/70A PPAK SO8 | 
|   | AUIRFR8403IR (Infineon Technologies) | MOSFET N-CH 40V 100A DPAK | 
|   | IRF6218PBFRochester Electronics | AUTOMOTIVE HEXFET P-CHANNEL | 
|   | XP232N0301TR-GTorex Semiconductor Ltd. | MOSFET N-CH 30V 300MA SOT23 | 
|   | PSMN7R0-100PS,127Nexperia | MOSFET N-CH 100V 100A TO220AB | 
|   | STP5NK65ZFPSTMicroelectronics | MOSFET N-CH 650V 4.5A TO220FP | 
|   | DMN10H220LVT-13Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 100V 1.87A TSOT26 | 
|   | FDB075N15A-F085Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 150V 110A D2PAK | 
|   | BUK9M9R1-40EXNexperia | MOSFET N-CH 40V 64A LFPAK33 |