English
简体中文
MEMS OSC XO 35.0000MHZ CMOS SMD
XTAL OSC XO 66.6700MHZ CMOS SMD
MOSFET N-CH 25V 35A IPAK
.050 X .050 TERMINAL STRIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.7mOhm @ 35A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 52 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.61 pF @ 13 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 88W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SUP60030E-GE3Vishay / Siliconix |
MOSFET N-CH 80V 120A TO220AB |
|
BSP322PL6327HTSA1Rochester Electronics |
MOSFET P-CH 100V 1A SOT223-4 |
|
IRF9Z30PBFVishay / Siliconix |
MOSFET P-CH 50V 18A TO220AB |
|
IAUZ40N10S5N130ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 40A 8TSDSON-33 |
|
IPG20N06S2L-35AATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN67D7L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 210MA SOT23-3 |
|
IPB100N08S207ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STD11N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 7.5A DPAK |
|
IRF4104PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO220AB |
|
SIRA88DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 45.5A PPAK SO-8 |
|
SIHA20N50E-E3Vishay / Siliconix |
MOSFET N-CH 500V 19A TO220 |
|
NVMFS5C460NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 21A/78A 5DFN |
|
IRFH8330TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 17A/56A PQFN |