English
简体中文
NMP CONFIGURABLE POWER SUPPLY 12
MOSFET N-CH 40V 30A PPAK SO-8
16P,2MM,SHRD HDR,DRVT,0.76AU,TB
CONN BARRIER STRP 11CIRC 0.374"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 10mOhm @ 9.7A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1860 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 45W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SFS9Z24Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK7M6R0-40HXNexperia |
MOSFET N-CH 40V 50A LFPAK33 |
|
SIA449DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK SC70-6 |
|
TK90S06N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 90A TO252-3 |
|
T2N7002AK,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 200MA SOT23 |
|
NVTFS6H888NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 4.7A/12A 8WDFN |
|
BUZ32HXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM5A1P30S6Rectron USA |
MOSFET P-CH 30V 5.1A SOT23-6 |
|
TP2520N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 200V 260MA TO243AA |
|
RUQ050N02HZGTRROHM Semiconductor |
MOSFET N-CH 20V 5A TSMT6 |
|
TPN22006NH,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 9A 8TSON |
|
E3M0120090JWolfspeed - a Cree company |
900V 120M AUTOMOTIVE SIC MOSFET |
|
BSL207SPH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 6A TSOP-6 |