English
简体中文
MEMS OSC XO 66.66666MHZ H/LVCMOS
MOSFET N-CH 25V 9.9A/21A 6PQFN
IC REG LIN 2.8V 400MA DFN1010-4
IC LED DRVR LIN DIM 350MA 16TQFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.9A (Ta), 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13mOhm @ 8.5A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 10.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 653 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-PQFN (2x2) |
| 包/箱: | 6-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK6D385-100EXNexperia |
MOSFET N-CH 100V 1.4A/3.7A 6DFN |
|
FJ3303010LPanasonic |
MOSFET P-CH 30V 100MA SSSMINI3 |
|
MCH3374-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 3A SC70FL/MCPH3 |
|
BUK7277-55A,118Nexperia |
MOSFET N-CH 55V 18A DPAK |
|
PSMN1R4-40YLDXNexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
STP110N7F6STMicroelectronics |
MOSFET N-CHANNEL 68V 110A TO220 |
|
STH260N6F6-2STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-2 |
|
RTQ035N03TRROHM Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6 |
|
STD13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A DPAK |
|
RE1E002SPTCLROHM Semiconductor |
MOSFET P-CH 30V 250MA EMT3F |
|
SI4668DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 25V 16.2A 8SO |
|
2SK2729-ERochester Electronics |
MOSFET N-CH 500V 20A TO3P |
|
IRF7805PBFRochester Electronics |
MOSFET N-CH 30V 13A 8SO |