English
简体中文
MOSFET N-CH 650V 25A TO220-3
ALTERNISTOR TRIAC 16A TO220
CONN RCPT HSNG MALE 55POS PNL MT
MOD THYRISTOR DIO DBLR 110A SF1
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 125mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 1.1mA |
| 栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2500 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMS8680Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 14A/35A 8PQFN |
|
FQP13N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 13.6A TO220-3 |
|
IRFD113PBFVishay / Siliconix |
MOSFET N-CH 60V 800MA 4DIP |
|
IPP60R600P7Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOB20S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO263 |
|
SSM3J168F,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 400MA S-MINI |
|
PMCM4401UPEZRochester Electronics |
PMCM4401UPE - 20V, P-CHANNEL TRE |
|
STB100NF03L-03T4STMicroelectronics |
MOSFET N-CH 30V 100A D2PAK |
|
PHB191NQ06LT,118Nexperia |
MOSFET N-CH 55V 75A D2PAK |
|
IRF9Z34NSTRRPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 19A D2PAK |
|
BUK9Y59-60E,115Nexperia |
MOSFET N-CH 60V 16.7A LFPAK56 |
|
TBB1012MMTL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
IPD100N06S403ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3-11 |