







 
                            MEMS OSC XO 133.33333MHZ LVCMOS
 
                            XTAL OSC VCXO 622.0800MHZ LVDS
 
                            MOSFET N-CH 80V 67A 8PDFN
 
                            COMP O= .300,L= .94,W= .032
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 80 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 67A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 8.9mOhm @ 12A, 10V | 
| vgs(th) (最大值) @ id: | 2.5V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 90 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 6119 pF @ 40 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 83W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 8-PDFN (5x6) | 
| 包/箱: | 8-PowerTDFN | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | STD8N80K5STMicroelectronics | MOSFET N CH 800V 6A DPAK | 
|   | AUIRFP064NRochester Electronics | AUTOMOTIVE HEXFET N CHANNEL | 
|   | IPD60R180C7ATMA1IR (Infineon Technologies) | MOSFET N-CH 600V 13A TO252-3 | 
|   | BSS225H6327FTSA1IR (Infineon Technologies) | MOSFET N-CH 600V 90MA SOT89 | 
|   | FDD390N15ASanyo Semiconductor/ON Semiconductor | MOSFET N-CH 150V 26A DPAK | 
|   | UPA2803T1L-E2-AYRochester Electronics | MOSFET N-CH 20V 20A 8DFN | 
|   | FQU7N20TURochester Electronics | MOSFET N-CH 200V 5.3A IPAK | 
|   | IXFT150N17T2Wickmann / Littelfuse | MOSFET N-CH 175V 150A TO268HV | 
|   | IPD30N06S2L13ATMA1Rochester Electronics | IPD30N06 - 55V-60V N-CHANNEL AUT | 
|   | SIJH440E-T1-GE3Vishay / Siliconix | MOSFET N-CH 40V 200A PPAK 8 X 8 | 
|   | IXFQ72N30X3Wickmann / Littelfuse | MOSFET N-CH 300V 72A TO3P | 
|   | FQD13N06LTMSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 60V 11A DPAK | 
|   | BSN20-7Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 50V 500MA SOT23 |