English
简体中文
RES 3.3K OHM 10W 5% AXIAL
MOSFET N-CH 100V 13A DPAK
CABLE 5 COND 24AWG SHLD 100'
DUAL-PORT SRAM, 16KX16, 9NS, CMO
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 120mOhm @ 6.5A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 755 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 46W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP12N50M2STMicroelectronics |
MOSFET N-CH 500V 10A TO220 |
|
FDS5690Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7A 8SOIC |
|
IPN60R3K4CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 2.6A SOT223 |
|
IRFB5615PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 35A TO220AB |
|
FQPF6N80CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 5.5A TO220F |
|
DMP6250SE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 2.1A SOT223 |
|
BSP299L6327HUSA1Rochester Electronics |
MOSFET N-CH 500V 400MA SOT223-4 |
|
AON6312Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 30V 85A 8DFN |
|
DMP2040USS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 7A/15A 8SO T&R 2 |
|
IPD95R2K0P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 4A TO252-3 |
|
IRFPC50PBFVishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
NTMFS4937NCT3GRochester Electronics |
MOSFET N-CH 30V 10.2A 5DFN |
|
FDS2672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.9A 8SOIC |