English
简体中文
MOSFET N-CH 60V 4.3A SUPERSOT6
DIODE GEN PURP 50V 2A GP20
CONN RCPT MALE 35P SILV SLDR CUP
SCR MODULE 9500V 930A DO200AC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 55mOhm @ 4.3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 650 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SuperSOT™-6 |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRF7207QRochester Electronics |
MOSFET P-CH 20V 5.4A 8SO |
|
SI7111EDN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK1212-8 |
|
AUIRF7416QTRRochester Electronics |
PFET, 10A I(D), 30V, 0.02OHM, 1O |
|
STP24NM60NSTMicroelectronics |
MOSFET N-CH 600V 17A TO220 |
|
RSR025P03TLROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3 |
|
TPH7R006PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 60A 8SOP |
|
TK58A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 58A TO220SIS |
|
FDA28N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 28A TO3PN |
|
CSD18534KCSTexas Instruments |
MOSFET N-CH 60V 45A/100A TO220-3 |
|
IRFU1018EPBFRochester Electronics |
MOSFET N-CH 60V 56A IPAK |
|
IXTA120P065TWickmann / Littelfuse |
MOSFET P-CH 65V 120A TO263 |
|
ZXMP3A17E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.2A SOT-23-6 |
|
IRFI720GPBFVishay / Siliconix |
MOSFET N-CH 400V 2.6A TO220-3 |